This page covers the degradation and the sudden failures of semiconductor diodes: PN and PiN rectifiers and freewheeling diodes, silicon and SiC Schottky diodes, and Zener and transient voltage suppressor (TVS) diodes. The general overstress, Wunsch-Bell and avalanche models are on the Electrical Stress page, the thermal stability model on the Thermal Stress page, and the surge integral and cosmic-ray rates of power devices on the Silicon Power MOSFET, IGBT and Thyristors page; this page covers what is specific to diodes.

1. Why It Happens

Trigger: A high reverse voltage at high temperature, where the leakage heats the junction (Infineon; ST AN1542; Nexperia); a surge current at turn-on or in a fault (Chen et al.); a fast turn-off of a freewheeling diode in a converter (Xie et al.; Wu et al.); a transient pulse on a TVS (Renesas); humidity on the edge termination under high reverse voltage (Leppaenen et al.).
Mechanism, leakage and runaway: The reverse leakage grows exponentially with temperature, doubling every 10 to 20 $K$ , and the reverse loss raises the temperature further, so above a critical point no stable temperature exists (Infineon; ST AN1542; Wu et al.). A low Schottky barrier gives a low forward drop but a high leakage (Nexperia; Infineon).
Mechanism, recovery and avalanche: A snappy recovery gives a high current slope and an overvoltage on the stray inductance; at a high enough field a second avalanche with negative differential resistance forms current filaments that short the diode (Wu et al.).
Mechanism, surge: A large forward current heats the chip; in SiC merged PiN Schottky diodes the p+ islands inject and take over the current, and a non-uniform injection makes hot spots (Chen et al.).
Mechanism, humidity: Under high humidity, temperature and reverse voltage, lead dissolves locally from a glass passivation over the edge termination, a water-treeing process, and the diode breaks down there (Leppaenen et al.).
Mechanism, Zener drift: The Zener voltage moves with junction temperature, negatively below about 5 $V$ (tunnelling) and positively above it (avalanche), so self-heating shifts a reference (MCC).
What sets the rate: The junction temperature and the reverse voltage through $C_{T}$ and the thermal resistance (Infineon; Nexperia); the current slope and the stray inductance at turn-off (Xie et al.); the pulse length and the ambient temperature for TVS ratings (Renesas); the passivation material for humidity (Leppaenen et al.).
Failure criterion: Thermal runaway in reverse (Infineon); a short after a surge or an avalanche filament (Wu et al.); a leakage rise or a forward-voltage shift after HTRB and H3TRB (Materials Science Forum 2020); a Zener voltage outside the reference tolerance (MCC).

2. Where to Look

Location: The peripheral surface and the edge termination, where reverse-bias shorts form (Wu et al.; Leppaenen et al.); the Schottky contact and the p+ islands of SiC MPS diodes (Chen et al.); the central bond wires of a module, which lift first (Wu et al.).
Signature: A leakage that rises with temperature faster than the data sheet allows before a runaway; hot spots on the glass passivation in lock-in thermography, with tree-like structures under the glass (Leppaenen et al.); a short at the chip edge after a reverse-bias overstress (Wu et al.); a Zener voltage that changes for 20 $s$ or more after the current is applied (MCC).
Confirm with: Leakage against temperature at several voltages to build the reverse safe operating area (Nexperia); H3TRB with in-situ leakage monitoring (Leppaenen et al.); double-pulse recovery tests at the application slope and inductance (Xie et al.); TVS surge tests with 10/1000 and 8/20 $μ s$ waveforms (Renesas).
Look-alikes: Pulse-measured Zener voltages differ from the equilibrium value through self-heating, not drift (MCC). A leakage rise after high-temperature storage and after HTRB can come from different causes, since breakdown stability differed between the two in one SiC study (Materials Science Forum 2020).

3. Prevention

Design: Size the thermal path so that the reverse loss stays below $1/ (C_{T} R_{T H, J A})$ (my derivation) and keep about 25 $K$ of margin below $T_{M A X}$ (Infineon); remember that the thermal interface can lose 50 per cent of its cooling with age (Infineon); keep the stray inductance and the turn-off slope low and use soft-recovery diodes (Xie et al.); derate TVS ratings to 60 per cent at 85 $^{\circ} C$ and use the rating for the actual pulse length (Renesas).
Material and process: A higher Schottky barrier trades forward drop for two orders of magnitude less leakage (Nexperia); polyimide rather than glass passivation for humid high-voltage use (Leppaenen et al.); a continuous p+ surface in SiC MPS diodes for uniform surge current (Chen et al.).
Operation: Keep the junction cool in reverse blocking, since the leakage doubles every 10 to 20 $K$ ; supply Zener references at a fixed current and allow them to reach thermal equilibrium (MCC).
Screening and test: Reverse SOA curves for each voltage and thermal resistance (Nexperia); HTRB, H3TRB and high-temperature storage with leakage and forward-voltage distributions (Materials Science Forum 2020).

Leakage and Thermal Runaway

Name	Formula	Related Formulae	Variables/Constants
Temperature law of the reverse leakage	$I_{R} (T_{J}) = I_{R E F} e^{C_{T} (T_{J} - T_{R E F})}$	$C_{T} = \frac{1}{T _{R E F 2} - T _{R E F 1}} ln \frac{I _{R} ( T _{R E F 2} )}{I _{R} ( T _{R E F 1} )}, Δ T_{2 \times} = \frac{l n 2}{C _{T}}$	$I_{R} : r e v er se l e ak a g e c u r r e n t$ $T_{J} : j u n c t i o n t e m p er a t u r e$ $I_{R E F} : l e ak a g e a t t h e r e f er e n ce t e m p er a t u r e T_{R E F}$ $C_{T} : t e m p er a t u r e coe f f i c i e n t o f t h e l o g a r i t hm o f t h e l e ak a g e$ $Δ T_{2 x} : t e m p er a t u r e s t e p t ha t d o u b l es t h e l e ak a g e; I n f in eo n : C_{T} = 0.034 K^{- 1} f or a 650 V C oo l S i C S c h o tt k y a t 500 V f r o m 3 μ A a t 25^{\circ} C an d 200 μ A a t 150^{\circ} C, v o l t a g e se n s i t i v i t y 5.6 nA/V, an d a t e n f o l d s p r e a d o f l e ak a g e b e tw ee n S c h o tt k y t y p es i s co mm o n; S T A N 1542 : c o f ab o u t 0.055 p er^{\circ} C f or l o w - v o l t a g e S i S c h o tt k y r ec t i f i er s; W u e t a l . : t h e l e ak a g e o f a f r ee w h ee l in g d i o d e r o ug h l y d o u b l es e v er y 10 K; N e x p er ia : t h e l e ak a g e d e n s i t y f a l l s b y tw o or d er s o f ma g ni t u d e w h e n t h e ba r r i er r i ses f r o m 665 t o 805 meV$ $(co m p u t e d : Δ T_{2 x} = 20.4 K f or 0.034, 12.6 K f or 0.055 an d 10 K f or d o u b l in g p er 10 K (C_{T} = 0.069); I n f in eo n^{'} s tw o p o in t s g i v e 0.0336; a 0.14 eV hi g h er ba r r i er l o w er s t h e t h er mi o ni c l e ak a g e b y 225 a t 300 K an d 58 a t 400 K)$
Thermal runaway of a reverse-biased diode	$T_{J} = T_{A M B} + R_{T H, J A} (V_{R} I_{R} + P_{C O N D})$	$I_{R} = α e^{β I_{R}} \Rightarrow I_{R} = - \frac{W _{0} ( - α β )}{β}, β = C_{T} V_{R} R_{T H, J A}$ $α β \leq \frac{1}{e} \Leftrightarrow V_{R} I_{R} \leq \frac{1}{C _{T} R _{T H, J A}}$	$T_{A M B} : ambi e n t t e m p er a t u r e$ $R_{T H, J A} : j u n c t i o n - t o - ambi e n t t h er ma l r es i s t an ce$ $V_{R} : r e v er se v o l t a g e$ $P_{C O N D} : co n d u c t i o n l oss$ $α : l e ak a g e a t t h e j u n c t i o n t e m p er a t u r e w i t h o u t i t s o w n h e a t in g, I_{R E F} e^{C_{T} [T_{A M B} - T_{R E F} + R_{T H, J A} P_{C O N D}]}$ $W_{0} : p r in c i p a l b r an c h o f t h e L amb er t f u n c t i o n (I n f in eo n E q . 5 t o 7); t h e l a s t f or m i s t h e l imi t w h er e t h e L amb er t so l u t i o n s t o p s e x i s t in g (m y d er i v a t i o n, a l so o n t h e T h er ma l S t r ess p a g e); I n f in eo n : r u na w a y w h e n t h e d er i v a t i v e o f t h e l e ak a g e a g ain s t ambi e n t e x cee d s o n e, ab o v e ab o u t 180^{\circ} C ambi e n t f or 35 K/W, p os i t i v e f ee d ba c k in d y nami c o p er a t i o n w h e n t h e l e ak a g e l oss r i ses ab o v e ab o u t 10 p er ce n t o f t h e co n d u c t i o n l oss, 1 p er ce n t in n or ma l o p er a t i o n, a ma r g in o f ab o u t 25 K b e l o w T_{M A X}, an d r u na w a y w i t hin u p t o ab o u t 100 μ s; S T : s t ab l e i f t h e f or w a r d l oss e x cee d s t h e r e v er se l oss a t t h e s t a r t, an d ma x im u m j u n c t i o n t e m p er a t u r es o f 100 t o 156^{\circ} C f or f o u r O R - in g r ec t i f i er s; N e x p er ia : 18 K/W o n an o pt ima l b o a r d a g ain s t 220 K/W o n a s t an d a r d f oo tp r in t$ $(co m p u t e d : a t t h e l imi t t h e r e v er se l oss i s 1/ (C_{T} R_{T H, J A}), 0.84 W f or 0.034 K^{- 1} an d 35 K/W, an d 0.91 W f or 0.055 an d 20 K/W (a ss u m e d), w ha t e v er t h e v o l t a g e)$

Surge and Transient Pulses

Name	Formula	Related Formulae	Variables/Constants
Pulse power of a TVS diode against pulse length	$P_{P P} (t_{p}) = P_{P P} (t_{r e f}) (\frac{t _{r e f}}{t _{p}})^{m}$	$I_{P P} = \frac{P _{P P}}{V _{C}}, P_{P P} (T) = 0.6 P_{P P} (2 5^{\circ} C) at 8 5^{\circ} C$	$P_{P P} : p e ak p u l se p o w er$ $t_{p} : p u l se l e n g t h$ $t_{r e f} : r e f er e n ce l e n g t h (1000 μ s f or t h e 10/1000 μ s w a v e f or m)$ $m : e x p o n e n t$ $I_{P P} : p e ak p u l se c u r r e n t$ $V_{C} : c l am p in g v o l t a g e$ $T : ambi e n t t e m p er a t u r e; R e n es a s A N 1977 : a 200 W 10/1000 μ s T V S (S M F 13 C A, V_{C} = 21.5 V) i s r a t e d 950 W f or 8/20 μ s, g i v in g 9.3 an d 44.2 A, t h e c l am p in g v o l t a g e c an b e t ak e n co n s t an t f or a l l p u l se l e n g t h s, r a t in g s f a l l t o 60 p er ce n t a t 85^{\circ} C, a s u r g e ha s ab o u t 8 mi l l i o n t im es t h e e n er g y o f an E S D p u l se o f t h e s am e p e ak v o l t a g e, an d T V S d i o d es n e i t h er w e a r o u t n or d r i f t w i t hin t h e i r r a t in g s; t h e W u n sc h - B e l l l a w o f t h e E l ec t r i c a l S t r ess p a g e ha s m = 1/2$ $(co m p u t e d : t h e tw o R e n es a s p o in t s g i v e m = 0.40; w i t h m = 1/2 t h e 200 W r a t in g w o u l d g i v e 1410 W a t 20 μ s, so t h e W u n sc h - B e l l l a w o v er es t ima t es t h e s h or t - p u l se r a t in g o f t hi s p a r t; a t 85^{\circ} C I_{P P} i s 5.6 A)$
Bipolar surge mode of SiC merged PiN Schottky diodes	$V_{F} (I) Schottky branch \to PiN branch above V_{bi, p n}$	$\int i^{2} d t \approx \frac{I _{F S M}^{2} t}{2}$	$V_{F} : f or w a r d v o l t a g e$ $I : f or w a r d c u r r e n t$ $V_{bi, p n} : b u i l t - in v o l t a g e o f t h e p + i s l an d s, ab o u t 2.5 t o 3 V in 4 H - S i C (ba c k g r o u n d k n o w l e d g e), \int i^{2} d t : f u s in g in t e g r a l o f a ha l f - s in e s u r g e$ $I_{F S M} : s u r g e r a t in g$ $t : ha l f - cy c l e d u r a t i o n (t h e in t e g r a l f or m a s o n t h e S i l i co n P o w er p a g e); C h e n e t a l . (s im u l a t i o n) : a co n t in u o u s p + s u r f a ce g i v es a m or e u ni f or m bi p o l a r c u r r e n t, a v o i d s h o t s p o t s an d t h e s na p ba c k b e tw ee n t h e u ni p o l a r an d t h e bi p o l a r m o d e, an d r ai ses t h e s u r g e c a p abi l i t y b y 20.29 p er ce n t an d t h e s u r g e e n er g y b y 15.06 p er ce n t, w i t h a bi p o l a r o n - s t a t e v o l t a g e o f 4.69 V, 56.29 p er ce n t b e l o w t h e co n v e n t i o na l M P S$ $(n o n e w n u mb er s; t h e bi p o l a r b r an c h t ak es t h e s u r g e c u r r e n t a t a m u c h l o w er v o l t a g e t han t h e S c h o tt k y b r an c h w o u l d, w hi c h c u t s t h e p o w er in t h e s u r g e, m y r e a d in g)$

Zener Voltage Drift

Name	Formula	Related Formulae	Variables/Constants
Temperature drift of the Zener voltage	$Δ V_{Z} = \frac{α _{V Z} V _{Z} Δ T _{J}}{100}$	$Δ T_{J} = R_{θ J L} V_{Z} I_{Z}$	$Δ V_{Z} : c han g e o f t h e Z e n er v o l t a g e$ $α_{V Z} : t e m p er a t u r e coe f f i c i e n t in p er ce n t p er K$ $V_{Z} : Z e n er v o l t a g e$ $Δ T_{J} : j u n c t i o n t e m p er a t u r e c han g e f r o m 25^{\circ} C$ $R_{θ J L} : j u n c t i o n - t o - l e a d t h er ma l r es i s t an ce$ $I_{Z} : Z e n er c u r r e n t (t h e seco n d f or m i s ba c k g r o u n d k n o w l e d g e); M C C : α_{V Z} f r o m - 0.09 p er ce n t p er K f or l o w - v o l t a g e Z e n er s t o + 0.110 f or hi g h - v o l t a g e o n es, w i t h t h e s i g n c han g e n e a r 5 V, p os i t i v e an d c u r r e n t - in d e p e n d e n t ab o v e i t (a v a l an c h e), n e g a t i v e an d c u r r e n t - d e p e n d e n t b e l o w i t (t u nn e l l in g), D C t h er ma l e q u i l ib r i u m t ak es 20 s or l o n g er, so a p u l se t es t r e a d s a d i f f er e n t V_{Z}, an d t h e s hi f t i s e a s i l y see n a t 25 p er ce n t o f r a t e d p o w er in a x ia l p a c k a g es$ $(co m p u t e d : - 0.09 p er ce n t p er K a t 3.3 V i s - 2.97 mV/K an d + 0.11 p er ce n t a t 33 V i s + 36.3 mV/K; f or an a ss u m e d 12 V Z e n er w i t h + 0.06 p er ce n t p er K an d 300 K/W, 125 mW o f se l f - h e a t in g r ai ses t h e j u n c t i o n b y 37.5 K an d V_{Z} b y 0.27 V)$

Reverse Recovery and Avalanche

Name	Formula	Related Formulae	Variables/Constants
Reverse recovery of a PiN diode and its softness	$I_{R M} \approx (0.77 to 1) I_{T} \frac{d i _{T}}{d t} Q_{r r}$	$S = \frac{t _{f}}{t _{s}}, t_{r r} = t_{s} + t_{f}, V_{L σ} = - L_{σ} \frac{d i}{d t}$	$I_{R M} : p e ak r e v er se r eco v er y c u r r e n t$ $I_{T} : f or w a r d c u r r e n t b e f or e t u r n - o f f, d i_{T} / d t : c u r r e n t s l o p e$ $Q_{r r} : r eco v er e d c ha r g e (S e mik r o n A N 18 - 002 f or m)$ $S : so f t n ess$ $t_{s} : s t or a g e t im e t o t h e c u r r e n t p e ak$ $t_{f} : f a l l t im e a f t er i t$ $t_{r r} : r eco v er y t im e$ $V_{L σ} : o v er v o l t a g e a cr oss t h e s t r a y in d u c t an ce L_{σ}; X i e e t a l . : a n e w an o d e an d c a t h o d e s t r u c t u r e l o w er s I_{R M} f r o m 52 t o 27.2 A an d t_{r r} f r o m 336 t o 272 ns an d r ai ses S f r o m 0.6 t o 1.4 a t 1800 V, 32 A an d 1.2 μ H; W u e t a l . : a s na pp y r eco v er y (s ma l l S) g i v es a hi g h d I / d t an d v o l t a g e o v er s h oo t, an d a 1700 V d i o d e s h o w e d a f i r s t s t a t i c a v a l an c h e a t 2870 V an d a seco n d o n e w i t h n e g a t i v e d i f f er e n t ia l r es i s t an ce an d c u r r e n t f i l am e n t s a t 4180 V, w hi c h s h or t s t h e d e v i ce q u i c k l y$ $(co m p u t e d w i t h a ss u m e d v a l u es : 30 A, 100 A/ μ s an d Q_{r r} = 1 μ C g i v e I_{R M} = 48 t o 55 A, an d a f a l l a t 1 \times 1 0^{9} A / s t h r o ug h 50 nH a dd s 50 V)$

Important Questions

Ques: Does the reverse leakage of a diode double every 10, 13 or 20 kelvin?

The sources give different coefficients for different diodes. Wu et al. state that the leakage of a freewheeling diode roughly doubles every 10 $K$ , ST gives $c \approx 0.055$ per kelvin for low-voltage Si Schottky rectifiers, a doubling every 12.6 $K$ , and Infineon derives $C_{T} = 0.034$ per kelvin for a 650 $V$ SiC Schottky diode from its data sheet, a doubling every 20.4 $K$ (computed). The value depends on the barrier or the band gap and on whether thermionic emission or generation dominates, so none is universal. For a design the coefficient must be taken from two data-sheet points of the actual diode, as Infineon does; for a quick estimate of a Si diode, 10 $K$ is the more likely and the safer value, since it gives the fastest runaway (my reading). Reference: R. Wu, F. Blaabjerg, H. Wang and M. Liserre, ‘Overview of catastrophic failures of freewheeling diodes in power electronic circuits’, Microelectronics Reliability 53(9-11), 1788-1792 (2013) (Aalborg copy, fetch-tool summary); Y. Lausenaz, STMicroelectronics, ‘The Thermal Runaway Law in Schottky Used in OR-ing Application’, Application Note AN1542, May 2002 (fetch-tool summary; leakage formula partly garbled); Infineon Technologies, ‘Design with low-barrier Schottky diodes’, Application Note AN_2304_PL52_2305_112044, V1.0, 26 April 2023 (fetch-tool summary).

Ques: What is the maximum reverse loss before a Schottky diode runs away thermally?

It is set by the thermal resistance and the temperature coefficient of the leakage, not by the voltage. Infineon writes the self-consistent leakage as $I_{R} = α e^{β I_{R}}$ with $β = C_{T} V_{R} R_{T H, J A}$ and solves it with the Lambert function, $I_{R} = - W_{0} (- α β) / β$ . A real solution exists only while $α β \leq 1/ e$ , and at that limit $I_{R} = 1/ β$ , so the reverse loss is $V_{R} I_{R} = 1/ (C_{T} R_{T H, J A})$ (my derivation). For $C_{T} = 0.034$ per kelvin and 35 $K/W$ this is 0.84 $W$ (computed). Infineon finds runaway above about 180 $^{\circ} C$ ambient for that case and advises a margin of 25 $K$ , while ST states the practical rule that the forward loss must exceed the reverse loss at the start. Reference: Infineon Technologies, ‘Design with low-barrier Schottky diodes’, Application Note AN_2304_PL52_2305_112044, V1.0, 26 April 2023 (fetch-tool summary); Y. Lausenaz, STMicroelectronics, ‘The Thermal Runaway Law in Schottky Used in OR-ing Application’, Application Note AN1542, May 2002 (fetch-tool summary; leakage formula partly garbled); Thermal Stress page of this vault.

Ques: Does the TVS pulse rating fall as the square root of the pulse length?

Not for the example in the Renesas note. Its SMF13CA is rated 200 $W$ for the 10/1000 $μ s$ pulse and 950 $W$ for 8/20 $μ s$ , which gives an exponent of 0.40 between the two lengths (computed). The Wunsch-Bell law of the Electrical Stress page has 0.5 for heat that spreads into a half space, and with it the 200 $W$ rating would allow 1410 $W$ at 20 $μ s$ , 1.5 times the actual rating. The data-sheet curve of the part is therefore the more reliable value, and the square-root law overestimates the short-pulse capability of a real TVS, whose chip and package limit the heat flow. The rating must also be derated to 60 per cent at 85 $^{\circ} C$ , which gives 5.6 $A$ for the 10/1000 $μ s$ pulse (computed). Reference: Renesas Electronics, ‘Transient Voltage Suppressors: Operation and Features’, Application Note AN1977, Rev. 0.00, 9 August 2016 (fetch-tool summary); Electrical Stress page of this vault.

Ques: Why does a Zener voltage drift with current, and at which voltage is it most stable?

Because the current heats the junction, and the voltage has a temperature coefficient that changes sign near 5 $V$ . MCC gives -0.09 per cent per kelvin for low-voltage Zeners, where tunnelling dominates, and +0.110 per cent for high-voltage ones, where avalanche dominates, so a 3.3 $V$ Zener moves by -2.97 $mV/K$ and a 33 $V$ Zener by +36.3 $mV/K$ (computed). The self-heating $Δ T = R_{θ J L} V_{Z} I_{Z}$ makes the voltage depend on the current and on the time after switch-on, since equilibrium takes 20 $s$ or more: an assumed 12 $V$ Zener at 125 mW and 300 $K/W$ heats by 37.5 $K$ and rises by 0.27 $V$ (computed). Diodes near 5 $V$ , where the two mechanisms cancel, are the most stable references. Reference: Micro Commercial Components, ‘Zener Voltage Regulation With Temperature’, MCC Note Series C003 (year not stated) (fetch-tool summary).

Ques: Why do glass-passivated diodes fail in humid high-voltage tests?

Leppaenen et al. tested boost-stage modules from two vendors under H3TRB with a high DC voltage and monitored the leakage. All modules with glass passivation failed and all with polyimide passivation survived. Lock-in thermography found breakdown and hot spots on the glass over the high-voltage edge termination, with tree-like structures under the glass surface. Since these were amorphous, they were not electrochemical migration of metals but a local partial dissolution of lead from the glass, which the authors associate with water treeing. A diode that passes dry HTRB can therefore fail under humid bias through its passivation, so H3TRB at high voltage is the relevant test for outdoor converters, and the moisture models of the Environmental and Chemical page apply to the package. Reference: J. Leppaenen, G. Ross, V. Vuorinen, J. Ingman, J. Jormanainen and M. Paulasto-Kroeckel, ‘A humidity-induced novel failure mechanism in power semiconductor diodes’, Microelectronics Reliability 123, 114207 (2021) (abstract only); ‘High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes’, Materials Science Forum 1004, 1004-1009 (2020) (fetch-tool summary; authors not listed in the text read); Environmental and Chemical page of this vault.

Ques: How does the softness of the recovery decide whether a freewheeling diode survives?

A snappy recovery, with a short fall time after the current peak, gives a high current slope, and the stray inductance turns it into an overvoltage, $L_{σ} d i / d t$ , of 50 $V$ for 50 $nH$ at $1 \times 1 0^{9}$ A/s (computed). Wu et al. describe how a high field can start a second avalanche with negative differential resistance, in which the current forms filaments and shorts the diode; in a 1700 $V$ diode this occurred at 4180 $V$ after a first avalanche at 2870 $V$ . Xie et al. show that a new anode and cathode design raises the softness $t_{f} / t_{s}$ from 0.6 to 1.4 and lowers the peak recovery current from 52 to 27.2 $A$ at 1800 $V$ . A softness above 1 and a low stray inductance are therefore the main protection (my reading). Reference: R. Wu, F. Blaabjerg, H. Wang and M. Liserre, ‘Overview of catastrophic failures of freewheeling diodes in power electronic circuits’, Microelectronics Reliability 53(9-11), 1788-1792 (2013) (Aalborg copy, fetch-tool summary); J. Xie, L. Ma and Y. Gao, ‘Asymmetric anode and cathode extraction structure fast recovery diode’, Journal of Semiconductors 39(5), 054005 (2018) (fetch-tool summary).

Quartz 5

Explorer

Diodes (PN, PIN, Schottky, Zener)